1996. 11. 28 1/2 semiconductor technical data KTD2092 epitaxial planar npn transistor revision no : 2 switching application. interface circuit and driver circuit application. features high h fe : h fe =500 1500 (i c =0.5a). low collector saturation :v ce(sat) =0.35v(max.) (i c =1a). maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 7 v collector current dc i c 3 a pulse i cp 5 base current i b 1 a collector power dissipation ta=25 1 p c 2 w tc=25 1 25 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 10 a emitter cut-off current i ebo v eb =7v, i c =0 - - 10 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 80 - - v dc current gain h fe (1) v ce =1v, i c =0.5a 500 - 1500 h fe (2) v ce =1v, i c =1a 150 - - collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.01a - - 0.35 v base-emitter saturation voltage v be(sat) i c =1a, i b =0.01a - - 1.2 v collector-emitter forward voltage v ecf i e =3a, i b =0 - - 2.5 v transition frequency f t v ce =5v, i c =1a - 140 - mhz collector output capacitance c ob v ce =10v, i e =0, f=1mhz - 30 - pf switching time turn-on time t on i b1 30? b1 i 0 cc v =30v i b2 i b2 20 sec i =-i =10ma b1 b2 output duty cycle < 1% input - 0.5 - s storage time t stg - 5.0 - fall time t f - 0.7 - base collecto r emitter equivalent circuit
1996. 11. 28 2/2 KTD2092 revision no : 2 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v v =1v common emitter 3k 1k 500 300 5 100 50 10 3 c fe dc current gain h fe 1 0.3 0.1 0.05 collector current i (a) c h - i tc=100 c tc=25 c tc=-55 c common emitter ta=25 c transient thermal resistance th 0.1 1 0.1 0.01 0.001 pulse width t (s) w r - t th w r ( c/w) curves should be applied in thermal limited area. common emitter(single nonrepetitive pulse) (1) no heat sink (2) infinite heat sink (tc=25 c) 10 100 1 10 100 1k (1) (2) single nonrepetive pulse tc=25 c curves must be derated linearly with increase in temperature i max.(pulsed) c c i max. (continuous) 100 s 1m s 1 0m s 10 0 ms dc operat ion tc=25 c v max. ceo 20 10 5 3 1 0.5 0.3 0.1 0.05 0.02 collector current i (a) c safe operating area 200 100 30 10 3 1 collector-emitter voltage v (v) ce ce v =1v v =2v ce ce v =5v tc=25 c common emitter 3k 1k 500 300 5 100 50 10 3 c fe dc current gain h fe 1 0.3 0.1 0.05 collector current i (a) c h - i tc=-55 c tc=25 c tc = 1 0 0 c v - i c collector current i (a) 0.05 0.1 0.3 1 collector-emitter saturation ce(sat) c 310 0.02 5 common emitter 246810121416 0.4 0.8 1.2 1.6 2.0 2.4 2.8 20 10 4 2 1.4 1 0.5 0 i =0.2ma b v =5v ce ce v =1v v =2v ce 0.05 0.1 0.3 0.5 1 3 i /i =100 c b ce voltage v (v) ce(sat)
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